bys10-25 thru bys10-45 document number 86013 14-jul-05 vishay general semiconductor www.vishay.com 1 do-214ac (sma) surface mount schottky barrier rectifier major ratings and characteristics i f(av) 1.5 a v rrm 25 v to 45 v i fsm 40 a v f 0.50 v t j max. 150 c features low profile package ideal for automated placement guardring for overvoltage protection low power losses, high efficiency very low switching losses high surge capability meets msl level 1, per j-std-020c solder dip 260 c, 40 seconds typical applications for use in low voltage high frequency inverters, free- wheeling, dc-to-dc converters, and polarity protection applications mechanical data case: do-214ac (sma) epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes the cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol bys10-25 bys10-35 bys10-45 unit device marking code bys 025 bys 035 bys 045 maximum repetitive peak reverse voltage v rrm 25 35 45 v maximum average forward rectified current i f(av) 1.5 a peak forward surge current single half sine-wave superimposed on rated load at 8.3 ms at 10 ms i fsm 40 30 a junction and storage temperature range t j , t stg - 65 to + 150 c
www.vishay.com 2 document number 86013 14-jul-05 bys10-25 thru bys10-45 vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified# notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol bys10-25 bys10-35 bys10-45 unit maximum instantaneous forward voltage at 1.0 a (1) v f 500 mv maximum dc reverse current at v rrm (1) t j = 25 c t j = 100 c i r 500 10 a ma parameter symbol bys10-25 bys10-35 bys10-45 unit maximum thermal resistance - junction lead r jl 25 c/w maximum thermal resistance - junction ambient r ja 150 (1) 125 (2) 100 (3) c/w figure 1. max. reverse power dissipation vs. junction temperature p r -- max. reverse power dissipation (w) t j -- junctiontemperature (c) 0 40 80 120 160 0 1 2 3 4 7 200 5 6 bys10-25 bys10-35 bys10-45 r thja =100k/w r thja =25k/w figure 2. max. reverse current vs. junction temperature i r -- reverse current (ma) t j -- junctiontemperature (c) 0 40 80 120 160 0.1 1 10 100 1000 200 v r =v rrm
bys10-25 thru bys10-45 document number 86013 14-jul-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. max. aver age forward current vs. ambient temperature figure 4. max. aver age forward current vs. ambient temperature t amb -- ambient temperature (c) i fav -- average forward current (a) 0 0 0.4 0.8 1.2 1.6 2.0 40 80 120 160 200 v r =v rrm , half sinewave, r thja =25k/w bys10-25 bys10-35 bys10-45 t amb -- ambient temperature (c) i fav -- average forward current (a) 0 0 0.4 0.8 1.2 1.6 2.0 40 80 120 160 200 v r =0v, half sinewave 100k/w 125k/w 150k/w r thja =25k/w figure 5. max. forward current vs. forward voltage figure 6. diode capacitance vs. reverse voltage i f -- forward current (a) v f -- forward voltage (v) 0 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 2.0 t j =25- c t j =150- c t, heating time (sec.) transient thermal impedance (c/w) 0.01 0.1 1 10 100 0.1 1 10 100 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) 0.074 max. (1. 88 max.) 0.20 8 (5.2 8 ) ref 0.066 mi n . (1.6 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
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